SiC options 10x the breakdown electric powered subject energy of silicon, which makes it doable to configure bigger voltage (600V to thousands of V) power devices via a thinner drift layer and better impurity concentration. Considering that almost all of the resistance part of significant-voltage devices is situated while in https://www.facebook.com/permalink.php?story_fbid=pfbid037ygWqXdnuAU2knGnKdrt92ZWnAPHZRSAgmupiwLCfW1B8btwFnCGspm3F2Pv2FsRl&id=61562415773754&__cft__[0]=AZWoUPws0hIc1ZDTeTRXteSiEfFBOaUWYI91kX8VGC79uFeq10IsV-0KASqOREUKFAQb7wd1PD2XzF0_lC-PUw-yknYcUJ15fIwYjkcdjJL4hiwyW3PqyAST0meCwIVbakD50BRbw3sc4FMaiAIdE5fkqnKuvhFLxfiMtz5z0VmhHPQHzCmwhKDm42JQUdxI2bhFzroHOQkNQ9qKFHrGULqm&__tn__=%2CO%2CP-R